参数资料
型号: MUR1020CTPBF
厂商: Vishay Semiconductors
文件页数: 5/8页
文件大小: 154K
描述: DIODE ULT FAST 200V 5A TO220AB
产品目录绘图: TO-220AB Front
其它图纸: TO-220AB Circuit
标准包装: 1,000
系列: FRED Pt™
电压 - 在 If 时为正向 (Vf)(最大): 990mV @ 5A
电流 - 在 Vr 时反向漏电: 10µA @ 200V
电流 - 平均整流 (Io)(每个二极管): 5A
电压 - (Vr)(最大): 200V
反向恢复时间(trr): 35ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
产品目录页面: 1535 (CN2011-ZH PDF)
其它名称: *MUR1020CTPBF
VS-MUR1020CTPBF
VS-MUR1020CTPBF-ND
VSMUR1020CTPBF
VSMUR1020CTPBF-ND
VS-MUR1020CTPbF, VS-MUR1020CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Aug-11
5
Document Number: 94076
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
VR
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
(4)
rr
0.5 IRRM
dI(rec)M/dt
(5)
0.75 IRRM
(2)
IRRM
trr
tb
ta
IF
(1)
dIF/dt
0
(3)
(1) dIF/dt - rate of change of current
through zero cro
ssing
(2) IRRM
- peak rever
se recovery current
(3) trr
- rever
se recovery time measured
from zero cro
ssing point of negative
going I
F
to point where a line pa
ssing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Qrr
- area under curve defned by t
rr
and I
RRM
Qrr
=
trr
x I
RRM
2
(5) dI(rec)M/dt - peak rate of change of
current during t
b
portion of t
rr
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