参数资料
型号: MUR1020CTPBF
厂商: Vishay Semiconductors
文件页数: 2/8页
文件大小: 154K
描述: DIODE ULT FAST 200V 5A TO220AB
产品目录绘图: TO-220AB Front
其它图纸: TO-220AB Circuit
标准包装: 1,000
系列: FRED Pt™
电压 - 在 If 时为正向 (Vf)(最大): 990mV @ 5A
电流 - 在 Vr 时反向漏电: 10µA @ 200V
电流 - 平均整流 (Io)(每个二极管): 5A
电压 - (Vr)(最大): 200V
反向恢复时间(trr): 35ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
产品目录页面: 1535 (CN2011-ZH PDF)
其它名称: *MUR1020CTPBF
VS-MUR1020CTPBF
VS-MUR1020CTPBF-ND
VSMUR1020CTPBF
VSMUR1020CTPBF-ND
VS-MUR1020CTPbF, VS-MUR1020CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Aug-11
2
Document Number: 94076
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (TJ
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF
= 1.0 A, dI
F/dt = 50 A/μs, VR
= 30 V - - 35
ns
-24-
IF
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 A - - 25
TJ
= 25 °C
= 25 °C - 3.3 -
IF
= 5 A
dIF/dt = 200 A/μs
= 125 °C - 5.0 -
VR
= 160 V
= 25 °C - 33 -
TJ
= 125 °C - 35 -
Peak recovery current IRRM
TJ
A
TJ
Reverse recovery charge Qrr
TJ
nC
TJ
= 125 °C - 76 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
TJ, TStg
- 65 - 175 °C
Thermal resistance,
junction to case per leg
RthJC
--5
--50°C/W
Thermal resistance,
junction to ambient per leg
RthJA
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth
and greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-220AB MUR1020CT
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