参数资料
型号: MUR1020CTPBF
厂商: Vishay Semiconductors
文件页数: 3/8页
文件大小: 154K
描述: DIODE ULT FAST 200V 5A TO220AB
产品目录绘图: TO-220AB Front
其它图纸: TO-220AB Circuit
标准包装: 1,000
系列: FRED Pt™
电压 - 在 If 时为正向 (Vf)(最大): 990mV @ 5A
电流 - 在 Vr 时反向漏电: 10µA @ 200V
电流 - 平均整流 (Io)(每个二极管): 5A
电压 - (Vr)(最大): 200V
反向恢复时间(trr): 35ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
产品目录页面: 1535 (CN2011-ZH PDF)
其它名称: *MUR1020CTPBF
VS-MUR1020CTPBF
VS-MUR1020CTPBF-ND
VSMUR1020CTPBF
VSMUR1020CTPBF-ND
VS-MUR1020CTPbF, VS-MUR1020CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Aug-11
3
Document Number: 94076
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Ca
pacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
100
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
0.1
TJ
= 175 °C
TJ
= 125 °C
TJ
= 25 °C
0.001
0.01
0.1
1
10
100
0 8040 120 160 200
0.0001
VR
- Reverse Voltage (V)
I
R
- Reverse Current (μA)
TJ
= 175 °C
TJ
= 150 °C
TJ
= 125 °C
TJ
= 100 °C
TJ
= 25 °C
1 10 100 1000
100
10
1
VR
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1
- Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance (°C/W)
1
2
.
x Z
thJC
+ T
C
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t
2. Peak TJ
= P
DM
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
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