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参数资料
| 型号： | MSE1PBHM3/89A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE |
| 封装： | HOLOGEN FREE AND ROHS COMPLIANT, PLASTIC, MICROSMP, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 86K |
| 代理商： | MSE1PBHM3/89A |
Document Number: 89067
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount ESD Capability Rectifier
MSE1PB thru MSE1PJ
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
General
purpose,
polarity
protection,
and
rail-to-rail
protection in both consumer and automotive applications.
FEATURES
Very low profile - typical height of 0.65 mm
Ideal for automated placement
Oxide planar chip junction
Low forward voltage drop, low leakage
current
ESD capability
Meets
MSL
level
1,
per
J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
100 V, 200 V, 400 V, 600 V
IFSM
20 A
VF at IF = 1.0 A
0.925 V
IR
1 μA
TJ max.
175 °C
MicroSMP
eSMP Series
Top View
Bottom View
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
MSE1PB
MSE1PD
MSE1PG
MSE1PJ
UNIT
Device marking code
SB
SD
SG
SJ
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
V
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
20
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous forward voltage
IF = 0.5 A
TA = 25 °C
VF (1)
0.940
-
V
IF = 1.0 A
1.016
1.1
IF = 0.5 A
TA = 125 °C
0.834
-
IF = 1.0 A
0.925
0.98
Maximum reverse current
Rated VR
TA = 25 °C
IR (2)
-1.0
μA
TA = 125 °C
3.7
50
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
780
-
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
5-
pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MSE1PB-M3/89A | 功能描述:整流器 1.0 Amp 100 Volt 20 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MSE1PD | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount ESD Capability Rectifier |
| MSE1PDHM3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount ESD Capability Rectifier |
| MSE1PDHM3/89A | 功能描述:整流器 1.0 Amp 200 Volt 20 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MSE1PD-M3/89A | 功能描述:整流器 1.0 Amp 200 Volt 20 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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