参数资料
型号: MSE1PBHM3/89A
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 100 V, SILICON, SIGNAL DIODE
封装: HOLOGEN FREE AND ROHS COMPLIANT, PLASTIC, MICROSMP, 2 PIN
文件页数: 2/4页
文件大小: 86K
代理商: MSE1PBHM3/89A
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 89067
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MSE1PB thru MSE1PJ
Vishay General Semiconductor
New Product
Note
(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas. RJL is measured
at the terminal of cathode band.
Notes
(1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV
(2) System ESD standard
Note
(1) Automotive grade
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
THERMAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
MSE1PB
MSE1PD
MSE1PG
MSE1PJ
UNIT
Typical thermal resistance
RJA (1)
110
°C/W
RJL (1)
30
RJC (1)
40
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C, unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS
SYMBOL
CLASS
VALUE
AEC-Q101-001
Human body model (contact mode)
C = 100 pF, R = 1.5 kW
VC
H3B
> 8 kV
AEC-Q101-002
Machine model (contact mode)
C = 200 pF, R = 0 W
M4
> 400 V
JESD22-A114
Human body model (contact mode)
C = 150 pF, R = 1.5 kW
3B
> 8 kV
JESD22-A115
Machine model (contact mode)
C = 200 pF, R = 0 W
C
> 400 V
IEC 61000-4-2 (2)
Human body model (contact mode)
C = 150 pF, R = 150 W
4
> 8 kV
Human body model (air-discharge mode) (1)
C = 150 pF, R = 150 W
4
> 15 kV
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MSE1PJ-M3/89A
0.006
89A
4500
7" diameter plastic tape and reel
MSE1PJHM3/89A (1)
0.006
89A
4500
7" diameter plastic tape and reel
0
0.2
0.4
0.6
0.8
1.0
1.2
95
105
115
125
135
145
165
175
155
Lead Temperature (°C)
A
v
erage
Forwar
d
Rectified
Curr
ent
(A)
T
L Measured
at the Cathode Band Terminal
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.2
0.4
0.8
1.0
1.2
0.6
Average Forward Current (A)
A
v
erage
Power
Lo
ss
(W)
D = t
p/T
t
p
T
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
相关PDF资料
PDF描述
MSICSN10120CC 10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
MSKD60-12 60 A, 1200 V, SILICON, RECTIFIER DIODE
MSKM-723-44 SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
MSKM-709-Q2 SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
MSKM-716-U2 SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
相关代理商/技术参数
参数描述
MSE1PB-M3/89A 功能描述:整流器 1.0 Amp 100 Volt 20 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
MSE1PD 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount ESD Capability Rectifier
MSE1PDHM3 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount ESD Capability Rectifier
MSE1PDHM3/89A 功能描述:整流器 1.0 Amp 200 Volt 20 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
MSE1PD-M3/89A 功能描述:整流器 1.0 Amp 200 Volt 20 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel