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Transistors
1
Publication date: November 2005
SJC00296CED
MSG43002
SiGe HBT type
For low-noise RF amplifier
■ Features
Compatible between high breakdown voltage and high cutoff fre-
quency
Low-noise, high-gain amplification
Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm
× 1.0 mm (height 0.39 mm)
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 9 V, I
E
= 01
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 6 V, IB = 01
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 01
A
Forward current transfer ratio
hFE
VCE
= 3 V, I
C
= 6 mA
100
220
Transition frequency
fT
VCE = 3 V, IC = 20 mA, f = 2 GHz
19
GHz
Forward transfer gain
S
21e
2
VCE = 3 V, IC = 20 mA, f = 2 GHz
7.5
10.5
dB
Noise figure
NF
VCE
= 3 V, I
C
= 6 mA, f = 2 GHz
1.4
2.0
dB
Collector output capacitance
Cob
VCB = 3 V, IE = 0, f = 1 MHz
0.4
0.7
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
9V
Collector-emitter voltage (Base open)
VCEO
6V
Emitter-base voltage (Collector open)
VEBO
1V
Collector current
IC
60
mA
Collector power dissipation*
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Marking Symbol: 5T
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) *: Copper plate at the collector is 5.0 cm2 on substrate at 10 mm
× 12
mm
× 0.8 mm.
0.60
±0.05
1.00±0.05
2
1
3
0.39
+0.01
0.03
0.25±0.05
0.50
±0.05
0.65±0.01
0.15
±0.05
2
1
0.35
±0.01
0.05±0.03
0.05
±0.03
3
This product complies with the RoHS Directive (EU 2002/95/EC).