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参数资料
| 型号： | MSM8129W-35 |
| 元件分类： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 35 ns, CQCC32 |
| 封装： | CERAMIC, LCC-32 |
| 文件页数： | 8/9页 |
| 文件大小： | 74K |
| 代理商： | MSM8129W-35 |
ISSUE 2.0 April 2001
MSM8129 - 020/025/30
8
Visual and Mechanical
Internal visual
2010 Condition B or manufacturers equivalent
100%
Temperature cycle
1010 Condition C (10 Cycles,-65°C to +150°C)
100%
Constant acceleration
2001 Condition E (Y, only) (30,000g)
100%
Pre-Burn-in electrical
Per applicable device specifications at T
A=+25
°C
100%
Burn-in
Method 1015,Condition D,T
A=+125
°C,160hrs min
100%
Final Electrical Tests
Per applicable Device Specification
Static (dc)
a) @ T
A=+25
°C and power supply extremes
100%
b) @ temperature and power supply extremes
100%
Functional
a) @ T
A=+25
°C and power supply extremes
100%
b) @ temperature and power supply extremes
100%
Switching (ac)
a) @ T
A=+25
°C and power supply extremes
100%
b) @ temperature and power supply extremes
100%
Percent Defective allowable (PDA)
Calculated at post-burn-in at T
A=+25
°C
5%
Hermeticity
1014
Fine
Condition A
100%
Gross
Condition C
100%
External Visual
2009 Per vendor or customer specification
100%
SCREEN
TEST METHOD
LEVEL
MB COMPONENT SCREENING FLOW
Military Screening Procedure
Screening Flow for high reliability product in accordance with MIL-STD-883 method 5004 is shown below.
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