参数资料
型号: MSS1P2LHM3/89A
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 20 V, SILICON, SIGNAL DIODE
封装: HALOGEN FREE AND ROHS COMPLIANT, MICROSMP-2
文件页数: 1/4页
文件大小: 86K
代理商: MSS1P2LHM3/89A
Document Number: 89020
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Schottky Barrier Rectifiers
MSS1P2L, MSS1P3L
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
FEATURES
Very low profile - typical height of 0.65 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency
Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
20 V, 30 V
IFSM
25 A
VF at IF = 1.0 A
0.35 V
TJ max.
150 °C
MicroSMP
eSMP Series
Top View
Bottom View
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MSS1P2L
MSS1P3L
UNIT
Device marking code
12L
13L
Maximum repetitive peak reverse voltage
VRRM
20
30
V
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
25
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous
forward voltage
IF = 0.5 A
TJ = 25 °C
VF (1)
0.39
-
V
IF = 1.0 A
0.44
0.50
IF = 0.5 A
TJ = 125 °C
0.28
-
IF = 1.0 A
0.35
0.40
Maximum reverse current
Rated VR
TJ = 25 °C
IR (2)
15
250
μA
TJ = 125 °C
6.0
20
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
65
-
pF
相关PDF资料
PDF描述
MSS1P2L-M3/89A 1 A, 20 V, SILICON, SIGNAL DIODE
MSS1P3-E3/89A 1 A, 30 V, SILICON, SIGNAL DIODE
MSS1P3L-G3/89A 1 A, 30 V, SILICON, SIGNAL DIODE
MSS1P5 1 A, 50 V, SILICON, SIGNAL DIODE
MSS1P6-G3/89A 1 A, 60 V, SILICON, SIGNAL DIODE
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