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参数资料
| 型号： | MT28F321P18FG-90BET |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA48 |
| 封装： | FBGA-48 |
| 文件页数： | 1/35页 |
| 文件大小： | 386K |
| 代理商： | MT28F321P18FG-90BET |
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1
2 Meg x 16 Page Flash Memory
2002, Micron Technology, Inc.
MT28F321P20_3.p65 – Rev. 3, Pub. 7/02
2 MEG x 16
PAGE FLASH MEMORY
PRELIMINARY
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE
SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S
PRODUCTION DATA SHEET SPECIFICATIONS.
FLASH MEMORY
MT28F321P20
MT28F321P18
Low Voltage, Extended Temperature
0.18m Process Technology
BALL ASSIGNMENT
48-Ball FBGA
FEATURES
Flexible dual-bank architecture
Support for true concurrent operation with zero
latency
Read bank a during program bank b and vice
versa
Read bank a during erase bank b and vice versa
Basic configuration:
Seventy-one erasable blocks
Bank a (4Mb for data storage)
Bank b (28Mb for program storage)
VCC, VCCQ, VPP voltages*
1.70V (MIN), 1.90V (MAX) VCC, VCCQ
(MT28F321P18)
1.80V (MIN), 2.20V (MAX) VCC, VCCQ
(MT28F321P20)
0.9V (MIN) VPP (in-system PROGRAM/ERASE)
12V ±5% (HV) VPP tolerant (factory
programming compatibility)
Random access time: 70ns and 80ns @ 1.80V VCC*
Page Mode read access*
Eight-word page
Interpage read access: 70ns/80ns @ 1.80V
Intrapage read access: 30ns @ 1.80V
Low power consumption (VCC = 2.20V)
Asynchronous READ < 15mA
Standby < 50A
Automatic power save (APS) feature
Enhanced write and erase suspend options
ERASE-SUSPEND-to-READ within same bank
PROGRAM-SUSPEND-to-READ within same bank
ERASE-SUSPEND-to-PROGRAM within same bank
Dual 64-bit chip protection registers for security
purposes
Cross-compatible command support
Extended command set
Common flash interface
PROGRAM/ERASE cycle
100,000 WRITE/ERASE cycles per block
* Data based on MT28F321P20 device.
NOTE: See page 7 for Ball Description Table.
See page 33 for mechanical drawing.
A
B
C
D
E
F
1
2
3
4
5
6
7
8
Top View
(Ball Down)
A13
A14
A15
A16
VCCQ
VSS
A19
A17
A6
DQ8
DQ9
DQ10
WP#
A18
A20
DQ2
DQ3
VCC
A8
WE#
A9
DQ5
DQ6
DQ13
A4
A2
A1
A0
VSS
OE#
A7
A5
A3
CE#
DQ0
DQ1
A11
A10
A12
DQ14
DQ15
DQ7
VPP
RST#
NC
DQ11
DQ12
DQ4
OPTIONS
MARKING
Timing
70ns access
-70
80ns access
-80
90ns access
-90
Boot Block Configuration
Top
T
Bottom
B
Package
48-ball FBGA (6 x 8 ball grid)
FG
Operating Temperature Range
Extended (-40C to +85C)
ET
Part Number Example:
MT28F321P20FG-70 TET
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT28F321P20 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH MEMORY |
| MT28F322D18 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH MEMORY |
| MT28F322D18FH-704BET | 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH MEMORY |
| MT28F322D18FH-704TET | 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH MEMORY |
| MT28F322D18FH-705BET | 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH MEMORY |
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