- 您现在的位置：买卖IC网 > PDF目录262949 > MT28F644W18FE-705KTET 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 PDF资料下载
参数资料
| 型号： | MT28F644W18FE-705KTET |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 |
| 封装： | VFBGA-56 |
| 文件页数： | 18/67页 |
| 文件大小： | 859K |
| 代理商： | MT28F644W18FE-705KTET |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页当前第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
09005aef8098d2b5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F644W30.fm – Rev. E, Pub. 12/03 EN
25
2003 Micron Technology. Inc. All rights reserved.
Fast Programming Algorithm (FPA)
Mode
The fast programming algorithm (FPA) is intended
for in-factory use. It enables fast data stream program-
ming. For in-factory programming, FPA minimizes
chip programming time when 11.4V
< VPP < 12.6V. FPA
algorithm can also provide accelerated program with
VPP = 1.8V. Executing the FPA command (30h) followed
by FPA CONFIRM (D0h), enables an entire block to be
programmed. This eliminates the need to continu-
ously update the address to be programmed.
An initial delay is required after issuing the FPA
command. (See Table 25.) If the block is locked, the
status register returns an error. When the FPA com-
mand is executed successfully, a data stream can be
programmed beginning at the first address. The
address can be held constant, or it can be incremented
within the address range. The program cycle ends
when the programmer writes FFFFh outside the
address range of the current block.
When the FPA is activated, the data must be pro-
vided in sequential order to the WSM. Immediately
after programming, verification is executed. The data
sequence and starting address are provided to the
WSM, which automatically performs a data verifica-
tion. The result is stored in the status register. Writing
FFFFh outside the memory block boundary exits the
verification cycle. Figure 9 shows the FPA flowchart.
Note that issuing a 70h command to the device after
FPA setup will be interpreted as data and will be writ-
ten to the device.
Figure 9: Fast Programming Algorithm (FPA) Flowchart (in-factory only)
NOTE:
1. When reading the status register, the address must be within the block being programmed.
2. During FPA verify, if a word fails to verify, status changes to 90h.
3. BA = Address within block.
4. WA = First word Address to be written in the block.
Start
FPA Setup
Exit
Operation
Complete
WRITE 30h
Address = WA4
WRITE D0h
Address = WA4
FPA Setup Time
Read
Status Register1
Check VPP and
Lock Errors
(SR3, SR1)
Unlock Block
SR7 = 0
SR7 = 1
FPA Setup
Done?
WRITE Data
Address = WA4
Read
Status Register
WRITE FFFFh
Address
≠ BA3
Read
Status Register1
SR0 = 0
SR0 = 1
SR0 = 0
SR0 = 1
Yes
No
SR0 = 0
SR0 = 1
Yes
No
Data
Stream Ready?
Program
Done?
Last Data?
WRITE Data
Address = WA4
Read
Status Register2
WRITE FFFFh
Address
≠ BA3
Read
Status Register1
SR0 = 0
SR0 = 1
Verify
Stream Ready?
Verify
Done?
Last Data?
Full Status
Check Procedure
Read
Status Register1
SR7 = 1
SR7 = 0
FPA
Exited?
FPA Program
FPA Verify
FPA Exit
相关PDF资料 |
PDF描述 |
|---|---|
| MPAT-122128-1003MS | 12200 MHz - 12750 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX |
| MPAT-122128-10101MS | 12200 MHz - 12750 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX |
| MPAT-122128-10103FS | 12200 MHz - 12750 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX |
| MPAT-122128-10103MS | 12200 MHz - 12750 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX |
| MPAT-122128-10151MS | 12200 MHz - 12750 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT28F800B3 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH MEMORY |
| MT28F800B3SG-10B | 制造商:Micron Technology Inc 功能描述: |
| MT28F800B3SG-9 B | 功能描述:IC FLASH 8MBIT 90NS 44SOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT28F800B3SG-9 B TR | 功能描述:IC FLASH 8MBIT 90NS 44SOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT28F800B3SG-9 BET | 功能描述:IC FLASH 8MBIT 90NS 44SOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
发布紧急采购，3分钟左右您将得到回复。