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参数资料
| 型号： | MT28F644W18FE-705KTET |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 |
| 封装： | VFBGA-56 |
| 文件页数： | 28/67页 |
| 文件大小： | 859K |
| 代理商： | MT28F644W18FE-705KTET |
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4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
09005aef8098d2b5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F644W30.fm – Rev. E, Pub. 12/03 EN
34
2003 Micron Technology. Inc. All rights reserved.
Reading a Block’s Lock Status
The lock status of every block can be read in the
read device identifier mode. To enter this mode, write
90h to the device. Subsequent READs at the base block
address +00002 will output the lock status of that
block. The lowest two outputs, DQ0 and DQ1, repre-
sent the lock status. DQ0 indicates the block lock/
unlock status and is set by the LOCK command and
cleared by the UNLOCK command. It is also automati-
cally set when entering lock down. DQ1 indicates lock
down status and is set by the LOCK DOWN command.
It can only be cleared by reset or power-down, not by
software. Table 13 on page 31 shows the locking state
transition scheme and Table 14 shows the write pro-
tection truth table.
Locking Operations During Erase Sus-
pend
Changes to a block’s lock status can be performed
during an erase suspend by using the standard locking
command sequences to unlock, lock, or lock down.
This is useful in the case when another block needs to
be updated while an ERASE operation is in progress.
To change a block’s lock status during an ERASE
operation, first write the ERASE SUSPEND command
(B0h), then check the status register until it indicates
that the ERASE operation has been suspended. Next,
write the desired LOCKING command sequence to the
desired block, and the block’s lock status will be
changed. After completing any desired LOCK, READ,
or PROGRAM operations, resume the ERASE operation
with the ERASE RESUME command (D0h).
If an erase suspended block has its lock status
changed, the lock status bits will change immediately.
When the ERASE is resumed, the ERASE operation will
complete. A LOCKING operation cannot be performed
during a PROGRAM SUSPEND.
Using
nested
locking
or
program
command
sequences during erase suspend can introduce ambi-
guity into status register results. Following protection
configuration setup (60h), an invalid command will
produce a command sequence error (SR4 and SR5 will
be set to “1”) in the status register. If a command
sequence error occurs during an erase suspend, SR4
and SR5 will be set to “1” and will remain at “1” after
the erase suspend is resumed. When the ERASE is
complete, any possible error during the ERASE cannot
be detected via the status register because of the previ-
ous command sequence error. This is also true if an
error occurs during a PROGRAM operation error
nested within an erase suspend.
Table 14:
Write Protection Truth Table
VPP WP# RST# WRITE PROTECTION
XX
VIL
Device inaccessible
VIL
XVIH
Word program and block erase
prohibited
XVIL
VIH
All lock down blocks locked
XVIH
VIH
All lock down blocks can be unlocked
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT28F800B3 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH MEMORY |
| MT28F800B3SG-10B | 制造商:Micron Technology Inc 功能描述: |
| MT28F800B3SG-9 B | 功能描述:IC FLASH 8MBIT 90NS 44SOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT28F800B3SG-9 B TR | 功能描述:IC FLASH 8MBIT 90NS 44SOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT28F800B3SG-9 BET | 功能描述:IC FLASH 8MBIT 90NS 44SOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
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