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参数资料
| 型号： | MT3S03AS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-2H1A, SSM, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 123K |
| 代理商： | MT3S03AS |
MT3S03AS
2003-08-08
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
A
DC current gain
hFE
VCE = 1 V, IC = 5 mA
80
160
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note)
0.75
1.1
pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
Caution
This device electrostatic sensitivity. Please handle with caution.
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相关代理商/技术参数 |
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|---|---|
| MT3S03AT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S03AT_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
| MT3S03AU | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S04AFS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF~UHF Band Low-Noise Amplifier Applications |
| MT3S04AS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
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