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参数资料
| 型号： | MT3S08T |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-1B1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 74K |
| 代理商： | MT3S08T |
MT3S08T
2002-01-23
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S08T
VHF~UHF Band Low Noise Amplifier Applications
Sutable for use in an OSC
Low noise figure
NF = 1.4dB
|S21e|2 = 10.5dB (@1 V/5 mA/1 GHz)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
8
V
Emitter-base voltage
VEBO
1.5
V
Collector current
IC
40
mA
Base current
IB
10
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight:
g (typ.)
T H
2
1
3
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相关代理商/技术参数 |
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| MT3S106FS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF-UHF Low Noise Amplifier Application |
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| MT3S111P | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF-UHF Low-Noise, Low-Distortion Amplifier Applications |
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