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参数资料
| 型号： | MT3S108FS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | K BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-1E1A, FSM, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 75K |
| 代理商： | MT3S108FS |
MT3S108FS
2007-11-01
1
TOSHIBA Transistor Silicon-Germanium Npn Epitaxial Planer Type
MT3S108FS
VCO OSCILLETOR STAGE
VHF-SHF Low Noise Amplifier Application
Features
Low Noise Figure :NF=0.9dB (@f=2GHz)
High Gain:|S21e|2=11.5dB (@f=2GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
10
V
Collector-Emitter voltage
VCEO
4.5
V
Emitter-Base voltage
VEBO
1.5
V
Collector-Current
IC
25
mA
Base-Current
IB
12.5
mA
Collector Power dissipation
PC(Note 1)
100
mW
Junction temperature
Tj
150
°C
Storage temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device mounted on a glass-epoxy PCB(1.0 cm
2 x 1.0 mm (t))
Unit:mm
0
.15
±
0
.05
0.
3
5
±
0.
0
5
0.
6
±
0.
0
5
0.
2±0
.0
5
1.0±0.05
0.8±0.05
0.1±0.05
1
2
3
0.
1±
0.
05
0
.4
8
+
0
.02
-0
.04
1.BASE
2.EMITTER
3.COLLECTOR
fSM
JEDEC
-
JEITA
-
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
2
1
3
4 1
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相关代理商/技术参数 |
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|---|---|
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