参数资料
型号: MT3S41T
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: TESM, 2-1B1A, 3 PIN
文件页数: 1/4页
文件大小: 127K
代理商: MT3S41T
MT3S41T
2007-11-01
1
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S41T
VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
FEATURES
Low Noise Figure :NF=1.2dB (@f=2GHz)
High Gain:|S21e|2=10dB (@f=2GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
8
V
Collector-Emitter voltage
VCEO
4.5
V
Emitter-Base voltage
VEBO
1.5
V
Collector-Current
IC
80
mA
Base-Current
IB
40
mA
Collector Power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Storage temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
TESM
JEDEC
JEITA
TOSHIBA
2-1B1A
Weight:0.0022g (typ.)
3
1
2
Q 7
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