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参数资料
| 型号： | MT45W2MV16BAFB-601WT |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 60 ns, PBGA54 |
| 封装： | FBGA-54 |
| 文件页数： | 14/55页 |
| 文件大小： | 816K |
| 代理商： | MT45W2MV16BAFB-601WT |
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2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
ADVANCE
09005aef80ec6f63
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_32.fm - Rev. A 2/18/04 EN
21
2004 Micron Technology, Inc. All Rights Reserved.
Refresh Configuration Register
The refresh configuration register (RCR) defines
how the CellularRAM device performs its transparent
self refresh. Altering the refresh parameters can dra-
matically reduce current consumption during standby
mode. Page mode control is also embedded into the
RCR. Table 8 below describes the control bits used in
the RCR. At power-up, the RCR is set to 0010h.
The RCR is accessed using CRE and A[19] LOW; or
through the configuration register software access
sequence with DQ = 0000h on the third cycle (see Con-
Partial Array Refresh (RCR[2:0])
Default = Full Array Refresh
The PAR bits restrict refresh operation to a portion
of the total memory array. This feature allows the
device to reduce standby current by refreshing only
that part of the memory array required by the host sys-
tem. The refresh options are full array, three-quarters
array, one-half array, one-quarter array, or none of the
array. The mapping of these partitions can start at
either the beginning or the end of the address map (see
Table 8:
Refresh Configuration Register Mapping
PAR
A4
A3
A2
A1
A0
Read Configuration
Register
Address Bus
4
5
1
2
3
0
RESERVED
6
A5
0
1
Deep Power-Down
DPD Enable
DPD Disable (default)
RCR[4]
TCR
RCR[6] RCR[5]
1
0
Maximum Case Temp.
+85C
Internal sensor (default)
+45C
+15C
A6
All must be set to "0"
A[18:8]
18–8
19
20
Register
Select
RESERVED
A20
A19
0
1
Register Select
Select RCR
Select BCR
RCR[19]
All must be set to "0"
RCR[1]
0
1
RCR[0]
0
1
0
1
Refresh Coverage
Full array (default)
Bottom 3/4 array
Bottom 1/2 array
Bottom 1/4 array
RCR[2]
0
00
1
0
1
0
1
11
1
None of array
Top 3/4 array
Top 1/2 array
Top 1/4 array
DPD
Must be set to "0"
A7
7
PAGE
0
1
Page Mode Enable/Disable
Page Mode Disabled (default)
Page Mode Enable
RCR[7]
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT45W2MV16PFA-70 WT | 制造商:Micron Technology Inc 功能描述:2MX16 PSRAM PLASTIC WIRELESS TEMP FBGA 1.8V ASYNCH PSEUDO ST - Trays |
| MT45W2MW16BABB-706 L WT | 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| MT45W2MW16BABB-706 L WT TR | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Tape and Reel |
| MT45W2MW16BABB-706 WT | 制造商:Micron Technology Inc 功能描述:PSRAM Async 1 32M-Bit 2M x 16 70ns 54-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Trays 制造商:Micron Technology Inc 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA |
| MT45W2MW16BABB-706 WT TR | 功能描述:IC PSRAM 32MBIT 70NS 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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