参数资料
型号: MT46V32M4TG-8
厂商: Micron Technology, Inc.
英文描述: DOUBLE DATA RATE DDR SDRAM
中文描述: 双倍数据速率的DDR SDRAM内存
文件页数: 34/68页
文件大小: 2547K
代理商: MT46V32M4TG-8
34
128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65
Rev. C; Pub. 4/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
128Mb: x4, x8, x16
DDR SDRAM
PRELIMINARY
Figure 22
WRITE to PRECHARGE
Uninterrupting
t
DQSS (NOM)
CK
CK#
COMMAND
WRITE
NOP
NOP
NOP
PRE
7
NOP
ADDRESS
Bank
a
,
Col
b
Bank,
(
a
or
all
)
NOP
T0
T1
T2
T3
T2n
T4
T5
NOTE
: 1. DI
b
= data-in for column
b
.
2. Three subsequent elements of data-in are applied in the programmed order following DI
b
.
3. An uninterrupted burst of 4 is shown.
4.tWR is referenced from the first positive CK edge after the last data-in pair.
5. The PRECHARGE and WRITE commands are to the same device. However, the PRECHARGE and WRITE
commands may be to different devices, in which case tWR is not required and the PRECHARGE command could be
applied earlier.
6. A10 is LOW with the WRITE command (auto precharge is disabled).
7. PRE = PRECHARGE command.
T1n
T6
t
WR
t
RP
DQ
DQS
DM
DI
b
t
DQSS (MIN)
DQ
DQS
DM
DI
b
t
DQSS (MAX)
DQ
DQS
DM
DI
b
DON
T CARE
TRANSITIONING DATA
t
DQSS
t
DQSS
t
DQSS
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