参数资料
型号: MT5C2561EC-45IT
厂商: AUSTIN SEMICONDUCTOR INC
元件分类: SRAM
英文描述: 256K X 1 STANDARD SRAM, 45 ns, CQCC28
封装: CERAMIC, LCC-28
文件页数: 5/11页
文件大小: 81K
代理商: MT5C2561EC-45IT
SRAM
MT5C2561
MT5C2561
Rev. 2.6 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < T
C < 125
oC; V
CC = 5V +10%)
CAPACITANCE
Voltage on Any Pin Relative to Vss..................................-0.5V to +7V
Voltage on Vcc Supply Relative to Vss.............................-0.5V to +7V
Voltage Applied to Q.........................................................-0.5V to +6V
Storage Temperature......................................................-65oC to +150oC
Power Dissipation..............................................................................1W
Short Circuit Output Current.........................................................50mA
Lead Temperature (soldering 10 seconds)....................................+260oC
Junction Temperature..................................................................+175oC
SYM
-35
-45
UNITS NOTES
ICCSP
120
mA
3
ICCLP
100
mA
3
Power Supply
Current: Standby
ISBT1
25
mA
ISBCSP
20
mA
"L" Version Only
ISBCLP
33
mA
CE\ > VCC -0.2V; VCC = MAX
VIL < VSS +0.2V
VIH > VCC -0.2V; f = 0 Hz
CE\ > VIH; All Other Inputs
< VIL or > VIH, VCC = MAX
f = 0 Hz
MAX
CONDITIONS
Power Supply
Current: Operating
PARAMETER
CE\ < VIL; VCC = MAX
f = MAX = 1/tRC (MIN)
Output Open
DESCRIPTION
CONDITIONS
SYM
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
VIH
2.2
VCC+0.5
V1
Input Low (Logic 0) Voltage
VIL
-0.5
0.8
V
1, 2
Input Leakage Current
0V<VIN<VCC
ILI
-10
10
A
Output Leakage Current
Output(s) disabled
0V<VOUT<VCC
ILO
-10
10
A
Output High Voltage
IOH = -4.0mA
VOH
2.4
V
1
Output Low Voltage
IOL = 8.0mA
VOL
0.4
V
1
PARAMETER
CONDITIONS
SYM
MAX
UNITS
NOTES
Input Capacitance
CI
10
pF
4
Output Capacitance
CO
12
pF
4
TA = 25
oC, f = 1MHz
Vcc = 5V
相关PDF资料
PDF描述
M378T3253FG0-CE6 32M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
M93C06-DS3TG 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
M93C06-WDS7 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
MT2VDDT832UY-75XX 8M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
MB84VD22183EA-85PBS SPECIALTY MEMORY CIRCUIT, PBGA71
相关代理商/技术参数
参数描述
MT5C2564C-20/883C 制造商:Micross Components, Inc. 功能描述:SRAM, 256KB - Rail/Tube
MT5C2564C-20/IT 制造商:Micross Components 功能描述:SRAM, 256KB - Rail/Tube
MT5C2564C-20/XT 制造商:Micross Components 功能描述:SRAM, 256KB - Rail/Tube
MT5C2564C-20L/883C 制造商:Micross Components 功能描述:SRAM, 256KB - Rail/Tube
MT5C2564C-20L/IT 制造商:Micross Components 功能描述:SRAM, 256KB - Rail/Tube