参数资料
型号: MT6L58AFS
元件分类: 小信号晶体管
英文描述: 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: PLASTIC, FS6, 2-1F1A, 6 PIN
文件页数: 1/3页
文件大小: 0K
代理商: MT6L58AFS
MT6L58AFS
2010-08-20
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L58AFS
VHF~UHF Band Low-Noise Amplifier Applications
Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
Superior noise characteristics
Superior performance in buffer and oscillator applications.
Mounted Devices
Q1
Q2
Corresponding three-pin products:
TESM(fSM) mold products
MT3S06T
(MT3S06FS)
MT3S03AT
(MT3S03AFS)
Absolute Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Q1
Q2
Unit
Collector- base voltage
VCBO
10
V
Collector- emitter voltage
VCEO
5
V
Emitter- base voltage
VEBO
1.5
2
V
Collector current
IC
15
40
mA
Base current
IB
7
10
mA
100
Collector power dissipation
PC(Note 1)
110 (Note 2)
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: 10 mm
× 10 mm × 0.8 mm (t), mounted on a glass-epoxy printed circuit board.
Note 2: During two-element operation
Marking (top view)
Pin Assignment
(top view)
Unit: mm
0.
15
±0.
05
0.1±0.05
6
0.8±0.05
1.0±0.05
0.
0.
05
1
2
0.1±0.05
0.
35
0.
35
3
1.
0.
05
0.
1±0
.0
5
4
0.
48
+0
.0
2
-0
.0
4
1. Collector1 (C1)
2. Emitter1 (E1)
3. Collector2 (C2)
4. Base2 (B2)
5. Emitter2 (E2)
6. Base1 (B1)
JEDEC
JEITA
TOSHIBA
2-1F1A
Weight: 1mg (typ.)
15
6
4
1
3
2
5
6
4
1
3
2
Q1
Q2
5
fS6
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