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参数资料
| 型号： | MTB1N100ET4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/10页 |
| 文件大小： | 256K |
| 代理商： | MTB1N100ET4 |
MTB1N100E
10
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 418B–02
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SEATING
PLANE
B
S
G
D
–T–
M
0.13 (0.005)
T
2
3
1
4
3 PL
K
J
H
V
E
C
A
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.340
0.380
8.64
9.65
B
0.380
0.405
9.65
10.29
C
0.160
0.190
4.06
4.83
D
0.020
0.035
0.51
0.89
E
0.045
0.055
1.14
1.40
G
0.100 BSC
2.54 BSC
H
0.080
0.110
2.03
2.79
J
0.018
0.025
0.46
0.64
K
0.090
0.110
2.29
2.79
S
0.575
0.625
14.60
15.88
V
0.045
0.055
1.14
1.40
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MTB1N100E/D
*MTB1N100E/D*
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