- 您现在的位置：买卖IC网 > PDF目录96090 > MTB23P06V (ON SEMICONDUCTOR) 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MTB23P06V |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 1/10页 |
| 文件大小： | 257K |
| 代理商： | MTB23P06V |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MTB23P06V/D
MTB23P06V
Preferred Device
Power MOSFET
23 Amps, 60 Volts
PChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (tp ≤ 10 ms)
VGS
VGSM
± 15
± 25
Vdc
Vpk
Drain Current Continuous @ 25°C
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp ≤ 10 μs)
ID
IDM
23
15
81
Adc
Apk
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD
90
0.60
3.0
Watts
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 23 Apk, L = 3.0 mH, RG = 25 Ω)
EAS
794
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient (Note 1.)
RθJC
RθJA
1.67
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10
seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTB23P06V
YWW
1
Gate
4
Drain
2
Drain
3
Source
23 AMPERES
60 VOLTS
RDS(on) = 120 mΩ
Device
Package
Shipping
ORDERING INFORMATION
MTB23P06V
D2PAK
50 Units/Rail
D2PAK
CASE 418B
STYLE 2
1
2
3
4
http://onsemi.com
PChannel
MTB23P06V
= Device Code
Y
= Year
WW
= Work Week
MTB23P06VT4
D2PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
相关PDF资料 |
PDF描述 |
|---|---|
| MTB2N40ET4 | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB2N60ET4 | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB2N60ET4 | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB2P50ET4 | 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTB30N06VLT4 | 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB23P06VT4 | 功能描述:MOSFET P-CH 60V 23A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MTB2-3PH001 | 制造商:ITT Interconnect Solutions 功能描述:MTB2-3PH001 - Bulk |
| MTB2-3PH016 | 制造商:ITT Interconnect Solutions 功能描述:Cable Assembly Pre-Wired Pigtail 0.152m 26AWG 3 POS Micro Strip PIN Crimp |
| MTB2-3PS | 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 3 POS 2.54mm Solder Cup ST Cable Mount |
| MTB2-3SAL1 | 制造商:ITT Interconnect Solutions 功能描述:Conn Socket Strip SKT 3 POS 2.54mm Solder RA Thru-Hole |
发布紧急采购，3分钟左右您将得到回复。