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参数资料
| 型号： | MTB2P50ET4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 273K |
| 代理商： | MTB2P50ET4 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
TMOS E-FET.
High Energy Power FET
D2PAK for Surface Mount
P–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This high voltage
MOSFET uses an advanced termination scheme to provide
enhanced voltage–blocking capability without degrading perfor-
mance over time. In addition, this advanced TMOS E–FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
500
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
500
Vdc
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100
°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
2.0
1.6
6.0
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size
PD
75
0.6
2.5
Watts
W/
°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 4.0 Apk, L = 10 mH, RG = 25 )
EAS
80
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size
R
θJC
R
θJA
R
θJA
1.67
62.5
50
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MTB2P50E/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
MTB2P50E
TMOS POWER FET
2.0 AMPERES
500 VOLTS
RDS(on) = 6.0 OHM
CASE 418B–02, Style 2
D2PAK
Motorola Preferred Device
D
S
G
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| MTB2P50ET4G | 功能描述:MOSFET PFET 500V 2A 6O RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTB306D | 功能描述:拨动开关 3PDT TOGGLE SWITCH Long Bat Actuator RoHS:否 制造商:C&K Components 触点形式:DPDT 开关功能:ON - ON - ON 电流额定值: 电压额定值 AC:20 V 电压额定值 DC:20 V 功率额定值:0.4 VA 端接类型:V-Bracket 安装风格: 端子密封:Epoxy 触点电镀:Gold 照明:Not Illuminated |
| MTB306D04 | 制造商:TE Connectivity 功能描述:Switch Toggle ON None ON 3PDT Bat Toggle Wire Lug 6A 250VAC 28VDC Panel Mount with Threads |
| MTB30HA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB30HAM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
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