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| 型号： | MTB30N06VL |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 30 AMPERES 60 VOLTS |
| 中文描述： | 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 262K |
| 代理商： | MTB30N06VL |
1
Motorola, Inc. 1996
"
! !
N–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resistance
area product about one–half that of standard MOSFETs. This new
technology more than doubles the present cell density of our 50
and 60 volt TMOS devices. Just as with our TMOS E–FET designs,
TMOS V is designed to withstand high energy in the avalanche and
commutation modes. Designed for low voltage, high speed
switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
New Features of TMOS V
On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETs
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and
TMOS E–FET
Surface Mount Package Available in 16 mm 13–inch/2500 Unit
Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
60
Vdc
±
15
±
20
Vdc
Vpk
30
20
105
Adc
Apk
90
0.6
3.0
Watts
W/
°
C
Watts
TJ, Tstg
EAS
– 55 to 175
°
C
mJ
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25
°
C
(VDD = 25 Vdc, VGS = 5 Vdc, PEAK IL = 30 Apk, L = 0.342 mH, RG = 25
)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (1)
154
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.67
62.5
50
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
260
°
C
REV 4
Order this document
by MTB30N06VL/D
SEMICONDUCTOR TECHNICAL DATA
TM
TMOS POWER FET
30 AMPERES
60 VOLTS
RDS(on) = 0.050 OHM
CASE 418B–02, Style 2
D2PAK
D
S
G
Motorola Preferred Device
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB30N06VLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) D2PAK T/R |
| MTB30P06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 60 VOLTS |
| MTB30P06V | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK Rail |
| MTB30P06VG | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK Rail |
| MTB30P06VT4 | 功能描述:MOSFET 60V 30A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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