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参数资料
| 型号： | MTB30P06 |
| 厂商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 30 AMPERES 60 VOLTS |
| 中文描述： | TMOS是功率场效应晶体管60伏30安培 |
| 文件页数： | 1/10页 |
| 文件大小： | 247K |
| 代理商： | MTB30P06 |
1
Motorola, Inc. 1996
!
P–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resis-
tance area product about one–half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V
On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and TMOS E–FET
Surface Mount Package Available in 16 mm 13–inch/2500 Unit Tape & Reel,
Add T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage
— Non–repetitive (tp
≤
10 ms)
Drain Current — Continuous @ 25
°
C
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ 25
°
C
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
60
Vdc
±
15
±
25
Vdc
Vpk
30
19
105
Adc
Apk
125
0.83
3.0
Watts
W/
°
C
TJ, Tstg
EAS
–55 to 175
°
C
mJ
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 30 Apk, L = 1.0 mH, RG = 25
)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (1)
450
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.2
62.5
50
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
260
°
C
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MTB30P06V/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
30 AMPERES
60 VOLTS
RDS(on) = 0.080 OHM
Motorola Preferred Device
D
S
G
TM
CASE 418B–02, Style 2
D2PAK
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB30P06V | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK Rail |
| MTB30P06VG | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK Rail |
| MTB30P06VT4 | 功能描述:MOSFET 60V 30A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTB30P06VT4G | 功能描述:MOSFET PFET D2PAK 60V 30A 80mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTB30SA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
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