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| 型号： | MTB4N80E1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 4.0 AMPERES 800 VOLTS |
| 中文描述： | 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 160K |
| 代理商： | MTB4N80E1 |
1
Motorola TMOS Power MOSFET Transistor Device Data
#"
! !
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
800
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C, when mounted with the minimum recommended pad size
Operating and Storage Temperature Range
800
Vdc
±
20
±
40
Vdc
Vpk
4.0
2.9
12
Adc
Apk
125
1.0
2.5
Watts
W/
°
C
Watts
TJ, Tstg
EAS
– 55 to 150
°
C
mJ
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 8.0 Apk, L = 10 mH, RG = 25
)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient, when mounted with the minimum recommended pad size
320
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.0
62.5
50
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTB4N80E1/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
4.0 AMPERES
800 VOLTS
RDS(on) = 3.0 OHM
Motorola Preferred Device
CASE 418C–01, Style 2
D2PAK–SL
D
S
G
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