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参数资料
| 型号： | MTB6N60E1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 6.0 AMPERES 600 VOLTS |
| 中文描述： | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 192K |
| 代理商： | MTB6N60E1 |
1
Motorola TMOS Power MOSFET Transistor Device Data
# "
! !
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This advanced
TMOS E–FET is designed to withstand high energy in the
avalanche and commutation modes. The new energy efficient
design also offers a drain–to–source diode with a fast recovery
time. Designed for low voltage, high speed switching applications in
power supplies, converters and PWM motor controls, these
devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional safety margin against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
600
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ 25
°
C
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
VDGR
VGS
VGSM
ID
ID
IDM
PD
600
Vdc
±
20
±
40
Vdc
Vpk
6.0
4.6
18
Adc
Apk
125
1.0
2.5
Watts
W/
°
C
Watts
TJ, Tstg
EAS
– 55 to 150
°
C
mJ
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25
)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (1)
405
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.0
62.5
50
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
260
°
C
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTB6N60E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
6.0 AMPERES
600 VOLTS
RDS(on) = 1.2 OHM
Motorola Preferred Device
CASE 418B–03, Style 2
D2PAK
D
S
G
REV 2
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