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参数资料
| 型号： | MTB6N60E1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 6.0 AMPERES 600 VOLTS |
| 中文描述： | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/10页 |
| 文件大小： | 192K |
| 代理商： | MTB6N60E1 |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
600
—
—
689
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
IDSS
—
—
—
—
1.0
50
μ
Adc
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
7.1
4.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.94
1.2
Ohms
—
—
6.0
—
8.6
7.6
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
gFS
2.0
5.5
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
1498
2100
pF
Output Capacitance
—
158
217
Reverse Transfer Capacitance
—
29
56
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
6 0 Ad
td(on)
tr
td(off)
tf
—
14
30
ns
Rise Time
—
19
40
Turn–Off Delay Time
—
40
80
Fall Time
)
—
26
50
Gate Charge
(VDS = 300 Vdc,D
(DS
VGS = 10 Vdc)
6 0 Ad
QT
Q1
Q2
Q3
—
35.5
50
nC
—
8.1
—
,
—
14.1
—
—
15.8
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.83
0.72
1.5
—
Vdc
Reverse Recovery Time
(IS = 6.0 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
6 0 Ad
trr
ta
—
266
—
ns
—
166
—
,
tb
—
100
—
Reverse Recovery Stored Charge
QRR
—
2.5
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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