参数资料
型号: MTB30P06V
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: TMOS POWER FET 30 AMPERES 60 VOLTS
中文描述: 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET
文件页数: 3/10页
文件大小: 247K
代理商: MTB30P06V
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
0
2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4
6
8
10
0
10
20
30
60
Figure 1. On–Region Characteristics
ID
0
1
2
3
4
8
0
10
20
30
60
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
10
20
30
40
50
0
0.02
0.04
0.06
0.12
R
0
10
20
30
40
60
0.04
0.05
0.08
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0
0.2
0.4
0.6
1.8
0
10
20
30
40
70
1
50
10
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 125
°
C
100
°
C
15 V
–25
0
25
50
75
100
150
TJ = 25
°
C
VDS
10 V
TJ = –55
°
C
25
°
C
100
°
C
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 15 A
40
50
12
7 V
6 V
5 V
4 V
8 V
9 V
40
50
5
6
7
0.08
0.1
60
0.06
0.07
50
0.8
1
1.2
1.4
1.6
125
60
175
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