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参数资料
| 型号： | MTB30P06VT4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/10页 |
| 文件大小： | 247K |
| 代理商： | MTB30P06VT4 |
MTB30P06V
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
62
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.6
5.3
4.0
—
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 15 Adc)
RDS(on)
—
0.067
0.08
Ohm
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 30 Adc)
(VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C)
VDS(on)
—
2.0
—
2.9
2.8
Vdc
Forward Transconductance
(VDS = 8.3 Vdc, ID = 15 Adc)
gFS
5.0
7.9
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
1562
2190
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
524
730
Transfer Capacitance
f = 1.0 MHz)
Crss
—
154
310
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 30 Vdc, ID = 30 Adc,
VGS = 10 Vdc,
RG = 9.1 )
td(on)
—
14.7
30
ns
Rise Time
(VDD = 30 Vdc, ID = 30 Adc,
VGS = 10 Vdc,
RG = 9.1 )
tr
—
25.9
50
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
98
200
Fall Time
G = 9.1 )
tf
—
52.4
100
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
QT
—
54
80
nC
(See Figure 8)
(VDS = 48 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
Q1
—
9.0
—
(VDS = 48 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
Q2
—
26
—
Q3
—
20
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
—
2.3
1.9
3.0
—
Vdc
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
175
—
ns
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
107
—
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
—
68
—
Reverse Recovery Stored Charge
QRR
—
0.965
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB30P06VT4G | 功能描述:MOSFET PFET D2PAK 60V 30A 80mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTB30SA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB30SAM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB30SAV | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB30SAVM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
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