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参数资料
| 型号： | MTB30P06VT4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 247K |
| 代理商： | MTB30P06VT4 |
MTB30P06V
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
0
2
4
6
8
10
0
10
20
30
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
0
1
2
3
4
8
0
10
20
30
60
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
10
20
30
40
50
0
0.02
0.04
0.06
0.12
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
10
20
30
40
60
0.04
0.05
0.08
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0
0.2
0.4
0.6
1.8
0
10
20
30
40
70
1
50
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 125°C
100
°C
15 V
–25
0
25
50
75
100
150
TJ = 25°C
VDS ≥ 10 V
TJ = –55°C
25
°C
100
°C
TJ = 100°C
25
°C
– 55
°C
TJ = 25°C
VGS = 0 V
VGS = 10V
VGS = 10 V
ID = 15 A
40
50
12
7 V
6 V
5 V
4 V
8 V
9 V
40
50
5
6
7
0.08
0.1
60
0.06
0.07
50
0.8
1
1.2
1.4
1.6
125
60
175
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB30P06VT4G | 功能描述:MOSFET PFET D2PAK 60V 30A 80mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTB30SA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB30SAM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB30SAV | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB30SAVM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
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