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参数资料
| 型号： | MTB33N10E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 33 AMPERES 100 VOLTS |
| 中文描述： | 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 2/10页 |
| 文件大小： | 266K |
| 代理商： | MTB33N10E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
100
—
—
118
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = – 25
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
—
7.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 16.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 33 Adc)
(ID = 16.5 Adc, TJ = – 25
°
C)
RDS(on)
VDS(on)
—
0.04
0.06
Ohm
—
—
1.6
—
2.4
2.1
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 16.5 Adc)
gFS
8.0
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
1830
2500
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
678
1200
Reverse Transfer Capacitance
—
559
1100
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
)
RG = 9.1
td(on)
tr
td(off)
tf
—
18
40
ns
Rise Time
(VDD = 50 Vdc, ID = 33 Adc,
VGS = 10 Vdc,
—
164
330
Turn–Off Delay Time
—
48
100
Fall Time
—
83
170
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
—
52
110
nC
(VDS = 80 Vdc, ID = 33 Adc,
Q1
Q2
Q3
—
12
—
—
32
—
—
24
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 33 Adc, VGS = 0 Vdc)
(IS = 33 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.0
0.98
2.0
—
Vdc
Reverse Recovery Time
(See Figure 14)
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
144
—
ns
(IS = 33 Adc, VGS = 0 Vdc,
—
108
—
—
36
—
Reverse Recovery Stored Charge
QRR
—
0.93
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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