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参数资料
| 型号： | MTB3N100ET4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/10页 |
| 文件大小： | 262K |
| 代理商： | MTB3N100ET4 |
MTB3N100E
10
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 418B–02
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SEATING
PLANE
B
S
G
D
–T–
M
0.13 (0.005)
T
2
3
1
4
3 PL
K
J
H
V
E
C
A
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.340
0.380
8.64
9.65
B
0.380
0.405
9.65
10.29
C
0.160
0.190
4.06
4.83
D
0.020
0.035
0.51
0.89
E
0.045
0.055
1.14
1.40
G
0.100 BSC
2.54 BSC
H
0.080
0.110
2.03
2.79
J
0.018
0.025
0.46
0.64
K
0.090
0.110
2.29
2.79
S
0.575
0.625
14.60
15.88
V
0.045
0.055
1.14
1.40
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MTB3N100E/D
*MTB3N100E/D*
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