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参数资料
| 型号： | MTB3N60E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 74K |
| 代理商： | MTB3N60E |
MTB3N60E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 250 Adc)
V(BR)DSS
600
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 600 V, VGS = 0)
(VDS = 480 V, VGS = 0, TJ = 125°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current — Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
—
100
nAdc
Gate–Body Leakage Current — Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
—
100
nAdc
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
(TJ = 125°C)
VGS(th)
2.0
1.5
—
4.0
3.5
Vdc
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 A)
RDS(on)
—
2.1
2.2
Ohms
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 3.0 A)
(ID = 1.5 A, TJ = 100°C)
VDS(on)
—
9.0
7.5
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 A)
gFS
1.5
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 V V
0
Ciss
—
770
—
pF
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Coss
—
105
—
Transfer Capacitance
f = 1.0 MHz)
Crss
—
19
—
SWITCHING CHARACTERISTICS*
Turn–On Delay Time
(V
300 V I
3 0 A
td(on)
—
23
—
ns
Rise Time
(VDD = 300 V, ID ≈ 3.0 A,
RL = 100 RG =12
tr
—
34
—
Turn–Off Delay Time
RL = 100 , RG = 12 ,
VGS(on) = 10 V)
td(off)
—
58
—
Fall Time
GS(on)
)
tf
—
35
—
Total Gate Charge
(V
420 V I
3 0 A
Qg
—
28
31
nC
Gate–Source Charge
(VDS = 420 V, ID = 3.0 A,
VGS = 10 V)
Qgs
—
5.0
—
Gate–Drain Charge
VGS = 10 V)
Qgd
—
17
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(I
3 0 A di/d
100 A/
)
VSD
—
1.4
Vdc
Forward Turn–On Time
(IS = 3.0 A, di/dt = 100 A/s)
ton
—
**
—
ns
Reverse Recovery Time
trr
—
400
—
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
Ld
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
Ls
—
7.5
—
* Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
** Limited by circuit inductance.
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