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参数资料
| 型号： | MTB4N80E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 4.0 AMPERES 800 VOLTS |
| 中文描述： | 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/10页 |
| 文件大小： | 195K |
| 代理商： | MTB4N80E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
800
—
—
1.02
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 800 Vdc, VGS = 0 Vdc)
(VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
7.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 2.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 4.0 Adc)
(ID = 2.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
1.95
3.0
Ohm
—
—
8.24
—
12
10
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc)
gFS
2.0
4.3
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
1320
2030
pF
Output Capacitance
—
187
400
Reverse Transfer Capacitance
—
72
160
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 400 Vdc, ID = 4.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
4 0 Ad
td(on)
tr
td(off)
tf
—
13
30
ns
Rise Time
—
36
90
Turn–Off Delay Time
—
40
80
Fall Time
)
—
30
75
Gate Charge
(See Figure 8)
(VDS = 400 Vdc,D
(DS
VGS = 10 Vdc)
4 0 Ad
QT
Q1
Q2
Q3
—
36
80
nC
—
7.0
—
,
—
16.5
—
—
12
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.812
0.7
1.5
—
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 4.0 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
4 0 Ad
trr
—
557
—
ns
ta
tb
—
100
—
,
—
457
—
Reverse Recovery Stored Charge
QRR
—
2.33
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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