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参数资料
| 型号： | MTB50N06VLT4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 249K |
| 代理商： | MTB50N06VLT4 |
MTB50N06VL
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
0
0.5
1
0
10
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
1
3
5
10
0
20
50
60
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
9
18
54
0.02
0.06
0.04
0.01
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
20
30
60
0
0.02
0.04
0.035
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
0.8
1.2
1.6
1.8
0
10
20
40
50
60
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
– 25
0
25
50
75
100
125
150
VGS = 5 V
ID = 21 A
TJ = 25°C
VGS = 10 V
8 V
6 V
5 V
3 V
VGS = 5 V
TJ = 100°C
25
°C
– 55
°C
25
°C
TJ = 25°C
VGS = 5 V
10 V
VGS = 0 V
TJ = 125°C
30
50
1.5
30
27
10
30
VDS ≥ 10 V
TJ = –55°C
100
°C
4 V
2
4
6
40
63
0
1
1.4
1000
100
°C
2
2.5
3
90
80
70
20
40
72
0.05
0.03
36
45
40
50
0.01
0.03
0.025
0.4
0.2
0
7 V
70
80
90
81
90
0.015
0.005
70
80
90
2
175
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相关代理商/技术参数 |
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| MTB50P03HDLT4G | 功能描述:MOSFET PFET D2PAK 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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