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参数资料
| 型号： | MTB52N06VLT4G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 115K |
| 代理商： | MTB52N06VLT4G |
MTB52N06VL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0) (Note 4.)
(VGS = 0 Vdc, ID = .25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
–
65
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
–
10
100
Adc
Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(Cpk
≥ 2.0) (Note 4.)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.5
4.5
2.0
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0) (Note 4.)
(VGS = 5 Vdc, ID = 26 Adc)
RDS(on)
–
0.022
0.025
Ohm
Drain–to–Source On–Voltage
(VGS = 5 Vdc, ID = 52 Adc)
(VGS = 5 Vdc, ID = 26 Adc, TJ = 150°C)
VDS(on)
–
1.6
1.4
Vdc
Forward Transconductance (VDS = 6.3 Vdc, ID = 20 Adc)
gFS
17
30
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
1900
2660
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
550
770
Transfer Capacitance
f = 1.0 MHz)
Crss
–
170
340
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
td(on)
–
15
30
ns
Rise Time
(VDD = 30 Vdc, ID = 52 Adc,
VGS = 5 Vdc
tr
–
500
1000
Turn–Off Delay Time
VGS = 5 Vdc,
RG = 9.1 )
td(off)
–
100
200
Fall Time
RG 9.1 )
tf
–
200
400
Gate Charge
(S
Fi
8)
QT
–
62
90
nC
(See Figure 8)
(VDS = 48 Vdc, ID = 52 Adc,
Q1
–
4.0
–
(VDS 48 Vdc, ID 52 Adc,
VGS = 5 Vdc)
Q2
–
31
–
Q3
–
16
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 52 Adc, VGS = 0 Vdc)
(IS = 52 Adc, VGS = 0 Vdc,
TJ = 150 °C)
VSD
–
1.03
0.9
1.5
–
Vdc
Reverse Recovery Time
trr
–
104
–
ns
(IS 52 Adc VGS 0 Vdc
ta
–
63
–
(IS = 52 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
–
41
–
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
–
0.28
–
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
–
3.5
4.5
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
–
7.5
–
nH
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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