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参数资料
| 型号： | MTB52N06VLT4G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 115K |
| 代理商： | MTB52N06VLT4G |
MTB52N06VL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
0
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
7 V
8 V
5 V
4 V
3 V
100
80
60
40
20
0
2
0
1.0
5
3
2.5
VDS ≥ 10 V
TJ = -55°C
100°C
25°C
VGS = 5 V
20
0
.030
0
40
60
80
100
TJ = 100°C
25°C
-55°C
TJ = 25°C
.040
0
VGS = 5 V
10 V
VGS = 5 V
ID = 26 A
1.6
1.4
1
0.6
0.4
-50
-25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125°C
1
0
1020
30405060
468
10
100
80
60
40
20
0
24
6
1.5
.020
.010
.030
.020
.010
20
40
60
80
110
100
10
100°C
175
1.8
110
90
70
50
30
10
13
57
9
90
70
50
30
10
110
3.5
4.5
5.5
0.5
30
10
50
70
90
110
.035
.025
.015
.005
10
30
50
70
90
1.2
0.8
6 V
.060
.050
.040
100
0.2
0
1000
.070
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