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参数资料
| 型号： | MTB60N06HD |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 9/11页 |
| 文件大小： | 279K |
| 代理商： | MTB60N06HD |
MTB60N06HD
http://onsemi.com
7
TYPICAL ELECTRICAL CHARACTERISTICS
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
t, TIME (s)
Figure 14. Thermal Response
1.0E05
0.1
1.0
0.01
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 15. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
Figure 16. D2PAK Power Derating Curve
RθJA = 50°C/W
Board material = 0.065 mil FR4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
相关PDF资料 |
PDF描述 |
|---|---|
| MTB60N06HDT4 | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB75N03HDL | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB75N03HDLT4 | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB75N06HDT4 | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB75N06HD | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB60N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB60N06J3 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:N -Channel Enhancement Mode Power MOSFET |
| MTB60N10E7L | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB60N10E7LT4 | 制造商:Motorola Inc 功能描述: |
| MTB60P06H8 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:P-Channel Logic Level Enhancement Mode Power MOSFET |
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