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参数资料
| 型号： | MTB75N06HD |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 282K |
| 代理商： | MTB75N06HD |
Semiconductor Components Industries, LLC, 2000
September, 2004 Rev.xxx
1
Publication Order Number:
MTB75N06HD/D
MTB75N06HD
Preferred Device
Power MOSFET
75 Amps, 60 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 30
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100
°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
75
50
225
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TC = 25°C
(Note 1.)
PD
125
1.0
2.5
Watts
W/
°C
Watts
Operating and Storage Temperature
Range
55 to 150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 75 Apk, L = 0.177 mH, RG = 25 )
EAS
500
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient (Note 1.)
RθJC
RθJA
1.0
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
MARKING DIAGRAM
& PIN ASSIGNMENT
T75N06HD
YWW
1
Gate
4
Drain
2
Drain
3
Source
75 AMPERES
60 VOLTS
RDS(on) = 10 m
Device
Package
Shipping
ORDERING INFORMATION
MTB75N06HD
D2PAK
50 Units/Rail
D2PAK
CASE 418B
STYLE 2
1
2
3
4
http://onsemi.com
NChannel
D
S
G
T75N06HD
= Device Code
Y
= Year
WW
= Work Week
MTB75N06HDT4
D2PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
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