- 您现在的位置：买卖IC网 > PDF目录98046 > MTB75N06HD (ON SEMICONDUCTOR) 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MTB75N06HD |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 282K |
| 代理商： | MTB75N06HD |
MTB75N06HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
68
60.4
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 V)
IGSS
5.0
100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
8.38
4.0
Vdc
mV/
°C
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 37.5 Adc)
RDS(on)
8.3
10
m
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 75 Adc)
(ID = 37.5 Adc, TJ = 125°C)
VDS(on)
0.7
0.53
0.9
0.8
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 37.5 Adc)
gFS
15
32
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
2800
3920
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
928
1300
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
180
252
SWITCHING CHARACTERISTICS (Note 3.)
TurnOn Delay Time
td(on)
18
26
ns
Rise Time
(VDS = 30 Vdc, ID = 75 Adc,
VGS =10Vdc
tr
218
306
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
67
94
Fall Time
RG
9.1
)
tf
125
175
Gate Charge
QT
71
100
nC
(VDS = 48 Vdc, ID = 75 Adc,
Q1
16.3
(VDS
48 Vdc, ID
75 Adc,
VGS = 10 Vdc)
Q2
31
Q3
29.4
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 75 Adc, VGS = 0 Vdc)
(IS = 75 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.97
0.88
1.1
Vdc
Reverse Recovery Time
trr
56
ns
(IS = 75 Adc,
ta
44
(IS
75 Adc,
dIS/dt = 100 A/s)
tb
12
Reverse Recovery Stored Charge
QRR
0.103
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
3.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
相关PDF资料 |
PDF描述 |
|---|---|
| MTB75N06HDT4 | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTC-8301-CJ-I | 8-BIT, 10 MHz, RISC MICROCONTROLLER, CQCC44 |
| MTD1302T4 | 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD1302 | 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD1302-1 | 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB7671 | 制造商:Megger 功能描述:METER TEST BOX |
| MTB-7PL80 | 制造商:ITT Interconnect Solutions 功能描述:MTB-7PL80 / 095262-0006 / MICRO |
| MTB-7SL80 | 制造商:ITT Interconnect Solutions 功能描述:MTB-7SL80 - Bulk |
| MTB8N50E | 制造商: 功能描述: 制造商:undefined 功能描述: |
| MTB90P06J3 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:P-Channel Logic Level Enhancement Mode Power MOSFET |
发布紧急采购，3分钟左右您将得到回复。