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参数资料
| 型号： | MTB75N06HD |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 282K |
| 代理商： | MTB75N06HD |
MTB75N06HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
I DSS
,LEAKAGE
(nA)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
0
0.5
1
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1
1000
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
VDS ≥ 10 V
TJ = 55°C
25
°C
50
25
0
25
50
75
100
125
150
0
10
20
60
40
VGS = 0 V
TJ = 125°C
VGS = 10 V
ID = 37.5 A
100
30
9 V
TJ = 25°C
100
°C
150
0
2
1.5
100
°C
1.9
1.6
1.3
1
0.7
25
47
36
8
125
100
75
50
25
VGS = 10 V
8 V
7 V
6 V
5 V
150
0
125
100
75
50
25
10
50
25
°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
0
50
150
TJ = 25°C
25
75
15 V
0.016
0.012
0.009
0.007
0.006
0.014
0.012
0.010
0.008
0.006
0.004
100
125
TJ = 25°C
VGS = 10 V
TJ = 100°C
25
°C
55
°C
VGS = 10 V
0.010
0.008
0
50
150
25
75
100
125
0.011
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