- 您现在的位置：买卖IC网 > PDF目录187168 > MTB6N60E1 (ON SEMICONDUCTOR) 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MTB6N60E1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 160K |
| 代理商： | MTB6N60E1 |
MTB6N60E1
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
600
—
689
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
50
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
7.1
4.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
RDS(on)
—
0.94
1.2
Ohms
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C)
VDS(on)
—
6.0
—
8.6
7.6
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
gFS
2.0
5.5
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Ciss
—
1498
2100
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
158
217
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
29
56
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(V
300 Vd
I
6 0 Ad
td(on)
—
14
30
ns
Rise Time
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS =10Vdc
tr
—
19
40
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
40
80
Fall Time
G
)
tf
—
26
50
Gate Charge
(V
300 Vd
I
6 0 Ad
QT
—
35.5
50
nC
(VDS = 300 Vdc, ID = 6.0 Adc,
Q1
—
8.1
—
( DS
, D
,
VGS = 10 Vdc)
Q2
—
14.1
—
Q3
—
15.8
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.83
0.72
1.5
—
Vdc
Reverse Recovery Time
(I
6 0 Ad
V
0 Vd
trr
—
266
—
ns
(IS = 6.0 Adc, VGS = 0 Vdc,
ta
—
166
—
( S
,
GS
,
dIS/dt = 100 A/s)
tb
—
100
—
Reverse Recovery Stored Charge
QRR
—
2.5
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
相关PDF资料 |
PDF描述 |
|---|---|
| MTB75N05HDT4 | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTC-9S6Q6-18.0 | 9 CONTACT(S), ALUMINUM ALLOY, FEMALE, CIRCULAR CONNECTOR, RECEPTACLE |
| MTC-9S6Q7-18.0 | 9 CONTACT(S), ALUMINUM ALLOY, FEMALE, CIRCULAR CONNECTOR, RECEPTACLE |
| MTC-9S6Q9-18.0 | 9 CONTACT(S), ALUMINUM ALLOY, FEMALE, CIRCULAR CONNECTOR, RECEPTACLE |
| MTC-9S8A1-18.0 | 9 CONTACT(S), ALUMINUM ALLOY, FEMALE, CIRCULAR CONNECTOR, RECEPTACLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB6N60ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTB75N03HDL | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, TO-263AB |
| MTB75N05HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 75 AMPERES 50 VOLTS |
| MTB75N05HDT4 | 功能描述:MOSFET N-CH 50V 75A D2PAK-3 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MTB75N06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 75 AMPERES 60 VOLTS |
发布紧急采购，3分钟左右您将得到回复。