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参数资料
| 型号： | MTB6N60E1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/8页 |
| 文件大小： | 160K |
| 代理商： | MTB6N60E1 |
MTB6N60E1
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
04
8
12
16
0
8
12
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
2.0
3.0
4.0
5.0
0
2
6
12
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25°C
VDS ≥ 10 V
TJ = – 55°C
100
°C
18
6 V
5 V
8
4
10
6
2.5
3.5
4.5
5.5
4
2
6
10
14
6.0
25
°C
VGS = 10 V
7 V
4 V
8 V
10
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ = 25°C
VGS = 10 V
15 V
1.1
1.3
1.4
1.2
1.0
0.9
26
48
12
10
0.8
0
02
6
10
0
1.0
2.0
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ = 100°C
VGS = 10 V
25
°C
–55
°C
0.5
48
1.5
2.5
12
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
VGS = 10 V
ID = 3 A
– 50
0
50
100
150
125
–25
25
75
2.5
2
1.5
1
0.5
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
VGS = 0 V
0
200
400
10
1000
100
300
600
500
TJ = 125°C
10000
100
°C
1
25
°C
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