参数资料
型号: MTB75N05HDT4
厂商: ON Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: MOSFET N-CH 50V 75A D2PAK-3
产品变化通告: Product Obsolescence 01/Apr/2004
标准包装: 800
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 50V
电流 - 连续漏极(Id) @ 25° C: 75A
开态Rds(最大)@ Id, Vgs @ 25° C: 9.5 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 100nC @ 10V
输入电容 (Ciss) @ Vds: 3900pF @ 25V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)
其它名称: MTB75N05HDT4OS
MTB75N05HD
TYPICAL ELECTRICAL CHARACTERISTICS (Note 5)
160
140
V GS = 10 V
7V
T J = 25 ° C
160
140
V DS ≥ 10 V
120
100
120
100
80
60
6V
80
60
40
40
100 ° C
T J = ? 55 ° C
20
5V
20
25 ° C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0
1
2
3
4
5
6
7
8
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.014
0.012
0.01
0.008
0.006
V GS = 10 V
T J = 100 ° C
25 ° C
? 55 ° C
0.009
0.008
0.007
0.006
T J = 25 ° C
V GS = 10 V
15 V
0.004
0.002
0
20
40
60
80
100
120
140
0.005
0
20
40
60
80
100
120
140
160
2
I D , DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance versus Drain Current
and Temperature
V GS = 10 V
I D = 37.5 A
10000
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance versus Drain Current
and Gate Voltage
V GS = 0 V
1.5
1
0.5
1000
100
10
T J = 125 ° C
100 ° C
25 ° C
0
? 50
? 25
0
25
50
75
100
125
150
0
0
5
10
15
20
25
30
35
40
45
50
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
5. Pulse Tests: Pulse Width ≤ 250 μ s, Duty Cycle ≤ 2%.
http://onsemi.com
3
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? To ? Source Leakage
Current versus Voltage
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