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参数资料
| 型号： | MTB9N25ET4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 258K |
| 代理商： | MTB9N25ET4 |
MTB9N25E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
0
2
4
6
8
10
9
15
18
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25°C
VDS ≥ 10 V
TJ = –55°C
100
°C
6
12
3
5 V
6 V
7 V
VGS = 10 V
2
3
4
5
6
7
0
9
15
18
6
12
3
0
25
°C
8 V
12
9 V
8
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
3
6
9
12
15
0
0.2
0.4
0.8
1.2
ID, DRAIN CURRENT (AMPS)
TJ = 100°C
25
°C
– 55
°C
TJ = 25°C
VGS = 10 V
1.0
0.6
18
0.3
0.4
0.5
0.6
0
3
6
9
12
15
18
15 V
VGS = 10 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
–50
0
0.5
1.0
1.5
2.0
0
100
200
1
10
100
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
–25
0
25
50
75
100
125
150
VGS = 0 V
50
150
250
TJ = 125°C
25
°C
100
°C
VGS = 10 V
ID = 4.5 A
2.5
1000
0.1
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