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参数资料
| 型号： | MTD1302 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 128K |
| 代理商： | MTD1302 |
MTD1302
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Drain Current and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
1.0
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5.0
10
40
ID, DRAIN CURRENT (AMPS)
0.01
-25
-50
TJ, JUNCTION TEMPERATURE (°C)
3.0
2.0
1.0
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5.0
20
1000
100
10
1.0
0.1
0
I D
,DRAIN
CURRENT
(AMPS)
R
0
0.4
0.8
1.2
10
20
30
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R DS(on)
50
25
10
30
15
I DSS
,LEAKAGE
(nA)
40
2.5
1.0
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
I D
,DRAIN
CURRENT
(AMPS)
0
1.5
2.0
5.0
30
,DRAIN-T
O-SOURCE
ON-RESIST
ANCE
(OHMS)
DS(on)
40
10
ID, DRAIN CURRENT (AMPS)
0.04
0.02
0.015
0.01
0.005
0
R
15
20
30
,DRAIN-T
O-SOURCE
ON-RESIST
ANCE
(OHMS)
DS(on)
TJ = 100°C
-55°C
25°C
TJ = 25°C
15
20
25
30
35
0.2
0.6
1.8
1.6
2.0
1.4
4.5
3.0
3.5
20
15
5.0
25
15
25
35
0.02
0.03
25
35
0.035
0.03
0.025
25
TJ = 25°C
VGS = 3.0 V
4.0 V
TJ = 125°C
25°C
-55°C
VGS = 10 V
10 V
VGS = 4.5 V
ID = 10 A
VGS = 10 V
VDS ≥ 10 V
TJ = 125°C
100°C
25°C
5.0 V
10 V
4.0
75
100
150
125
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| MTD1302-1 | 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
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