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参数资料
| 型号： | MTD1302T4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/12页 |
| 文件大小： | 205K |
| 代理商： | MTD1302T4 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Advance Information
HDTMOS E-FET
High Density Power FET
DPAK for Surface Mount
N–Channel Enhancement Mode Silicon Gate
This advanced HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode Is Characterized for Use In Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13″ / 2500 Unit
Tape & Reel, Add “T4” Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp
≤ 10 ms)
VGS
VGSM
± 20
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100
°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
20
16
60
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TC = 25°C (1)
PD
74
0.592
1.75
Watts
W/
°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 20 Apk, L = 1.0 mH, RG = 25 )
EAS
200
mJ
Thermal Resistance
Junction to Case
Junction–to–Ambient
Junction–to–Ambient (1)
R
θJC
R
θJA
R
θJA
1.67
100
71.4
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from Case for 5.0 seconds
TL
260
°C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MTD1302/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
CASE 369A–13, Style 2
MTD1302
TMOS POWER FET
20 AMPERES
30 VOLTS
RDS(on) = 0.022 OHM
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相关代理商/技术参数 |
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|---|---|
| MTD1312T4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTD1350 | 制造商:MARKTECH 制造商全称:Marktech Corporate 功能描述:Infrared Flat Top Photo Diode |
| MTD1361 | 功能描述:马达/运动/点火控制器和驱动器 Motor Drive IC RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| MTD1361-7101 | 功能描述:马达/运动/点火控制器和驱动器 Power IC RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| MTD1361F | 功能描述:马达/运动/点火控制器和驱动器 Motor Drive IC RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
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