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参数资料
| 型号： | MTD1N50E1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 131K |
| 代理商： | MTD1N50E1 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. XXX
1
Publication Order Number:
MTD1N50E/D
MTD1N50E
Preferred Device
Power MOSFET
1 Amp, 500 Volts
NChannel DPAK
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
draintosource diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
500
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
500
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (tp ≤ 10 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
Continuous
Continuous @ 100
°C
Single Pulse (tp ≤ 10 s)
ID
IDM
1.0
0.8
3.0
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
Total Power Dissipation @ TA = 25°C, when
mounted to minimum recommended pad
size
PD
40
0.32
1.75
Watts
W/
°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 3.0 Apk, L = 10 mH, RG = 25 )
EAS
45
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient, when mounted to
minimum recommended pad size
RθJC
RθJA
3.13
100
71.4
°C/W
Maximum Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
1 AMPERE
500 VOLTS
RDS(on) = 5
Device
Package
Shipping
ORDERING INFORMATION
MTD1N50E
DPAK
75 Units/Rail
CASE 369A
DPAK
STYLE 2
PIN ASSIGNMENT
http://onsemi.com
NChannel
D
S
G
MTD1N50E1
DPAK
75 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAM
Y
= Year
WW
= Work Week
T
= MOSFET
YWW
T
1N50E
1
Gate
3
Source
2
Drain
MTD1N50ET4
DPAK
2500 Tape & Reel
4
Drain
1
2
3
4
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相关代理商/技术参数 |
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|---|---|
| MTD1N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
| MTD1N80E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
| MTD1P40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD1P50E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM |
| MTD2001 | 制造商:SHINDENGEN 制造商全称:Shindengen Electric Mfg.Co.Ltd 功能描述:Stepping Motor Driver ICs |
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