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参数资料
| 型号： | MTD1N50E1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 131K |
| 代理商： | MTD1N50E1 |
MTD1N50E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
25°C
TJ = 100°C
VGS = 0 V
VGS = 10 V
ID = 0.5 A
8 V
7 V
6 V
5 V
VGS = 10 V
25°C
55 °C
TJ = 25°C
VGS = 10 V
15 V
TJ = 125°C
2.0
1.75
0
10
8
6
4
0
6.0
2.5
2.0
1.5
1.0
0.5
0
10000
1
0
2
4
6
8
10
12
14
16
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.5
0
0.4
0.8
1.2
1.6
2.0
0
0.25
50
25
0
25
50
75
100
125
150
0
100
200
300
500
2
5.5
5.0
4.5
4.0
3.5
3.0
100
25°C
100°C
1.50
1.25
1.0
0.75
0.50
0.25
2.0
1.75
0
1.50
1.25
1.0
0.75
0.50
0.25
5.5
6.0
0.50
0.75
1.0
1.25
1.50
1.75
2.0
1000
10
400
TJ = 100°C
55 °C
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相关代理商/技术参数 |
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|---|---|
| MTD1N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
| MTD1N80E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
| MTD1P40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD1P50E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM |
| MTD2001 | 制造商:SHINDENGEN 制造商全称:Shindengen Electric Mfg.Co.Ltd 功能描述:Stepping Motor Driver ICs |
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