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参数资料
| 型号： | MTD1N50E1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 131K |
| 代理商： | MTD1N50E1 |
MTD1N50E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
500
480
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
3.2
6.0
4.0
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 0.5 Adc)
RDS(on)
4.3
5.0
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125°C)
VDS(on)
4.5
6.0
5.3
Vdc
Forward Transconductance (VDS = Vdc, ID = 0.5 Adc)
gFS
0.5
0.9
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
10 Vd
Ciss
215
315
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 10 Vdc,
f = 1.0 MHz)
Coss
30.2
42
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
6.7
12
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
td(on)
8.0
20
ns
Rise Time
(VDD = 250 Vdc, ID = 1.0 Adc,
VGS =10Vdc
tr
9.0
10
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
14
30
Fall Time
RG 9.1 )
tf
17
30
Gate Charge
(S
Fi
8)
QT
7.4
9.0
nC
(See Figure 8)
(VDS = 400 Vdc, ID = 1.0 Adc,
Q1
1.6
(VDS
400 Vdc, ID
1.0 Adc,
VGS = 10 Vdc)
Q2
3.8
Q3
5.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1.)
(IS = 1.0 Adc, VGS = 0 Vdc)
(IS = 1.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.81
0.68
1.2
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
141
ns
(See Figure 14)
(I =10Adc V
= 0 Vdc
ta
82
(IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
58.5
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
0.65
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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相关代理商/技术参数 |
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